Critical fields and defect structure of vanadium deformed at 4.2 K
V. K. AksenovPhysicotechnical Institute, Academy of Sciences of the Ukrainian SSR, KharkovI.A. GindinPhysicotechnical Institute, Academy of Sciences of the Ukrainian SSR, KharkovV. I. SokolenkoPhysicotechnical Institute, Academy of Sciences of the Ukrainian SSR, KharkovYa. D. StarodubovPhysicotechnical Institute, Academy of Sciences of the Ukrainian SSR, Kharkov
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The variation of the second critical field Hc2 in coarse-grain vanadium due to torsional strain at 4.2 K is studied. In the region of elastic deformation, a slight increase in the value of Hc2 is observed. Beyond the yield point, the strain in a vanadium sample is nonuniform. In the regions of localized plastic flow (twin boundaries or large dislocation pile-ups), Hc2 and Tc increase due to an increase in the electron–phonon interaction constant.
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