The effect of phase and inelastic relaxation of electrons on superconducting properties of bismuth amorphous films
Ochiq kirish: yoʻq
Annotatsiya
The influence of the enhancement of electron elastic scattering, whose measure is the magnitude of resistance “per square” R□, on the superconducting transition temperature Tc of cold-deposited amorphous bismuth films of thickness less than 100 Å is analyzed. It is found that a decrease in Tc with increasing R□ correlates with the enhancement of inelastic and phase relaxation of electrons. The formula proposed on the basis of the analysis describes the experimental dependence Tc(R□) and takes into account the decrease in the phase relaxation time τϕ with increasing T□ Investigations of the dependence of fluctuation conduction above Tc on temperature and transverse magnetic field reveal deviations from the Aslamazov–Larkin and Maki–Thompson corrections for ε > εt (ε = In (T/Tc)). The values of εt vary from 0.5 to 0.25 and increase with R□ These effects are explained by the effect of inelastic electron–phonon collisions leading to a decrease in τϕ with increasing temperature and to a corresponding increase in the pair braking parameter r = In (Tc0/Tc) (Tc0 is the unperturbed value of Tc).
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