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The Aharonov–Bohm effect in narrow-band semiconductors

É. N. BogachekPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov

Soviet Journal of Low Temperature Physicsjournal1990en

Ochiq kirish: yoʻq

ABI

Annotatsiya

The Aharonov–Bohm effect is investigated in nonsingly connected semiconductors. The effect is manifested in the oscillating dependence of the magnetic moment (as well as persistent current) having the fundamental period hc/e and caused by the polarization of electrons in the valence band by the vector potential field.

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Mavzular

Quantum and electron transport phenomena Semiconductor materials and devices Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1063/10.0032711

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