Relaxation of energized electrons during transverse focusing in bismuth
В. В. АндриевскииPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovE. I. AssPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovYu. F. KomnikPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
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The energy dependence of the inelastic scattering length l(ε) of highly energized charge carriers in bismuth is determined by using the method of transverse electron focusing. It is found that for excess electron energy Δε ≥ εf the values of l remain large (approximately 10−2−10−3 cm). The role of thermal heating of the emitter in the region of high injection currents is discussed.
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