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Thin films of bismuth-antimony alloy with a dielectric coating of variable thickness

S. Sh. AkhmedovS. M. Umarov Physicotechnical Institute, Tajikistanian Academy of Sciences, DushanbeN. B. BrandtM. V. Lomonosov State University, MoscowK. N. KashirinS. M. Umarov Physicotechnical Institute, Tajikistanian Academy of Sciences, DushanbeE. I. ShvedkovPhysicotechnical Institute

Soviet Journal of Low Temperature Physicsjournal1992en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Semiconducting films of the alloy Bi–Sb (containing 11% Sb) and Bi films of a fixed thickness (300, 600, 900, 1200, 1500 Å) with a thin insulating layer of variable thickness (20–4 500 Å) (silicon dioxide, lithium fluoride) are investigated. An oscillating dependence of the resistance of films on the thickness of the insulating coating is observed.

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Mavzular

Thermodynamic and Structural Properties of Metals and Alloys nanoparticles nucleation surface interactions Copper Interconnects and Reliability

Identifikatorlar

DOI: 10.1063/10.0033321

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