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AkademIndex

Xizmatlar

Maqola

Polycrystalline silicon S-diode fabricated using phosphorus thermal diffusion along grain boundaries

R. AlievInstitute of Electronics, Academgorodok, 700143, Tashkent, UzbekistanB. M. AbdurakhmanovInstitute of Electronics, Academgorodok, 700143, Tashkent, UzbekistanR. BilyalovInstitute of Electronics, Academgorodok, 700143, Tashkent, Uzbekistan
Interface Sciencejournal1997en

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ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Semiconductor materials and interfacesSilicon and Solar Cell TechnologiesSilicon Nanostructures and Photoluminescence

Identifikatorlar

DOI
10.1007/bf00200844

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