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Storage of electrons in shallow donor excited states of GaP:Te

Sergey GanichevInstitut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, GermanyW. RaabInstitut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, GermanyE. ZepezauerInstitut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, GermanyW. PrettlInstitut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, GermanyI. N. YassievichInstitut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
1997en
ABI

Annotatsiya

Tellurium donors in GaP have been ionized by phonon-assisted tunneling in the electric field of pulsed far-infrared laser radiation. In response to the laser pulse a photoconductive signal has been detected with a fast component that follows in time the laser pulse and a slow component that rises after the irradiation has ceased and finally exponentially decays with a strongly temperature-dependent time constant varying from several microseconds to milliseconds. It is shown that this temporal structure of the signal is due to a storage of carriers in the valley-orbit split 1s(E) shallow donor state. Observation of far-infrared to mid-infrared up-conversion demonstrates that the final step of cascade recombination is achieved by radiative transitions.

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