Influence of accidental impurities and defects on the low-frequency dielectric relaxation in the ferroelectric Cd2Nb2O7
Н. Н. КолпаковаA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. WiesnerAdam Mickiewicz University, 61-614, Poznan, PolandA. O. LebedevAdam Mickiewicz University, Poznan, PolandП. П. СырниковAdam Mickiewicz University, Poznan, PolandV. A. KhramtsovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
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It is shown that accidental impurities and structural defects (cation vacancies) formed in the (CdO8) n−2 sublattice during synthesis enhance the relaxation properties of the system near T Curie and suppress the ferroelectric phase transition.
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