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Electrical properties of Schottky diodes using high-resistivity CdTe crystals

V. O. UkrainetsLvov Polytechnic State University, LvovГ. А. ИльчукA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. A. UkrainetsA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. V. RudA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. I. Ivanov-OmskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

Technical Physics Lettersjournal1999en

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ABI

Annotatsiya

The Schottky barrier height is measured for single crystals doped with the halogens Cl, Br, and I during growth by chemical transport reactions. The measurements are made using a modification of the F(V) function [N. V. Agrinskaya, Mater. Sci. Eng. B 16, 172 (1993)] proposed by the authors.

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Mavzular

Advanced Semiconductor Detectors and Materials Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1134/1.1262583

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