XAFS study on D+ irradiated Si surface
Tomoko YoshidaHisao YoshidaDepartment of Applied Chemistry , Graduate School of Engineering , Nagoya University , Nagoya 464- 8603 , Japan,T HaraDepartment of Nuclear Engineering ,Masahiro SakaiDepartment of Nuclear Engineering ,Akane OmoriDepartment of Nuclear Engineering ,Toshitaka TanabeCenter for Integrated Research in Science and Engineering , Nagoya University , Nagoya 464-8603 , Japan,
1999en
Ochiq kirishBronza
ABI
Annotatsiya
Si K-edge XANES recorded in a total electron yield mode was applied to characterize silicon samples irradiated by deuterium ions accelerated to 5 and 15 keV.In XANES of samples irradiated at 5 keV, peaks showing the formation of displaced atoms and Si-D bonds were observed.For samples irradiated at 15 keV, such a appreciable change was not observed, indicating that the accumulations of defects and implanted deuterium are mostly out of the analyzing depth of XANES.Thus, XANES successfully distinguished deuterium irradiated samples with the difference in the depth distribution of implanted deuterium and produced damages.
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