The effect of ultrasound on the parameters of metal-dielectric-semiconductor structures
П. Б. ПарчинскийTashkent State University, Tashkent, UzbekistanС. И. ВласовTashkent State University of EconomicsР. А. МуминовTashkent State University of EconomicsKh. Kh. IsmailovStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanU. T. TurgunovTashkent State University, Tashkent, Uzbekistan
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Data on the effect of ultrasound on the metal-oxide-semiconductor structures preliminary irradiated by γ-quanta are presented. It is demonstrated that the ultrasonic action results in a decrease of the radiation-induced charge in the dielectric layer of the structures under study. The observed effects are explained using a mechanism of the ultrasound-stimulated diffusion of radiation defects in the field of elastic stresses in the layer of silicon dioxide.
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