Ushbu ish iqtibos qilgan ishlar

4 ta ish

Ish: Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

1. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

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   Maqola19749 iqtibos

   ABIABI:AkademIndex/2026.other.424573

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   ABIABI:AkademIndex/2026.other.626285

3. Sarlavhasiz

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   ABIABI:AkademIndex/2026.other.626286

4. Sarlavhasiz

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   ABIABI:AkademIndex/2026.other.626287