Thermoradiation modification of characteristics of silicon diffusion diodes

The combined influence of irradiation and thermal treatment upon efficiency of formation of stable radiation defects in silicon diffusion diodes was studied by DLTS and measurements of transient characteristics. High-temperature (300 - 450 degrees Celsius) irradiation by 4 MeV electrons to fluences of 1015 - 1016 cm-2 was found to give rise the following radiation defect levels of acceptor nature: Ec- 0.13 eV and Ec-0.2 eV attributed to the complexes V-O3 and CsOi-Cs, as well as Ec-0.35 eV that related with a complex of C, O, and vacancy. The studies of influence of isochronal annealing on properties of these radiation defects have shown their thermal stability till temperature of 500 degrees Celsius. On the basis of obtained results the thermo-radiation approach is proposed for modification of characteristics of silicon p+-n structures, which is of important for regulation of thermal stability of recombination parameters of diodes together with increasing of their yield by 5 - 6%.

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