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Modification of Silicon Oxide by High Energy Electron Beam

E. KolesnikovaA.F. Ioffe Physicotechnical Institute RASA. А. СитниковаRussian Academy of SciencesВ. И. СоколовRussian Academy of SciencesM. V. ZamoryanskayaRussian Academy of Sciences

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ABI

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During interaction between thin film SiO2 and electron beam with high power density, amorphous silicon dioxide modifies. Silicon nanoclusters are formed in radiated area. Result of this interaction is formation of Si/SiO2 nanocomposite. We studied modified SiO2 by TEM, microdiffraction and cathodoluminescence.

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