Maqola

Investigation of Zn diffusion into InP which preliminary thermal treated in nitrogen atmosphere

M. AkhmedovaPhysical-Technical Institute of Academy of Sciences, UzbekistanА. В. СмирновPhysical-Technical Institute of Academy of Sciences, Uzbekistan

2005en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Preliminary thermal treatment of InP in nitrogen atmosphere before Zn diffusion process creates thin protective layer on the surface of semiconductor, which prevent evaporation of P and by this it reduces degradation of surface layer.

Hali tarjima qilinmagan

Mavzular

Semiconductor Quantum Structures and Devices Semiconductor Lasers and Optical Devices Photonic and Optical Devices

Identifikatorlar

DOI: 10.1109/iciprm.2005.1517515

Iqtiboslar va manbalar

0 ta iqtibos0 ta foydalanilgan manba