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p-n junctions obtained in (Ge2)x(GaAs)1–x varizone solid solutions by liquid phase epitaxy

Б. СапаевPhysical and Technical Institute of Uzbek Academy of Sciences, 2b, G. Mavlanov str.,700084 Tashkent, Republic of Uzbekistan

Semiconductor Physics Quantum Electronics & Optoelectronicsjournal2005en

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Litsenziya: cc-by-nd

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Annotatsiya

Fig. 1. Scheme of the cascade solar cell based on (Ge 2 ) x (GaAs) 1-x graded gap structure: 1 -n-GaAs-substrate, 2 -variable gap solid solution n-(Ge 2 ) x (GaAs), 3 -p-(Ge 2 ) x (GaAs) 1-x .

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Mavzular

Semiconductor materials and interfaces Phase-change materials and chalcogenides Silicon Nanostructures and Photoluminescence

Identifikatorlar

DOI: 10.15407/spqeo8.04.033

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