<title>Laser induced defect formation in GaAs near the optical breakdown threshold</title>
С. А. БахрамовNPO Akadempribor of Academy of Sciences (Uzbekistan)Sh. PayziyevNPO Akadempribor of Academy of Sciences (Uzbekistan)
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIEjournal2006en
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The investigations of nonlinear-optical properties of crystals GaAs by a z-scan method are carried out. The concentration increase (> 10 times) of defects in a crystal GaAs due to picosecond pulse laser (τ = 35 ps, λ= 1.064μm ) irradiation at a number of laser shots >10<sup>4</sup> near the optical breakdown threshold intensity was observed.
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