Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons
М. С. СаидовPhysicotechnical InstituteS. L. LutpullaevPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlanova 2B, Tashkent, 700084, UzbekistanА. YusupovPhysicotechnical InstituteI. G. AtabaevPhysicotechnical InstituteLyudmila I. KhirunenkoInstitute of PhysicsN. A. MatchanovPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlanova 2B, Tashkent, 700084, UzbekistanDilmurod SaidovPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlanova 2B, Tashkent, 700084, UzbekistanM. U. HajievPhysicotechnical Institute
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Annotatsiya
The concentration of divacancies formed in Si1 − x Ge x solid solutions under irradiation by fast and slow neutrons is investigated as a function of the germanium content. It is demonstrated that the role of annihilation of primary radiation-induced defects on germanium atoms in the compounds under investigation decreases upon irradiation by fast and slow neutrons.
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