Maqola

Mathematical model of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier

Nigmatulla YunusovTashkent University of Information Technologies, Tashkent, UzbekistanR.K. AtametovTashkent University of Information Technologies, Tashkent, UzbekistanSh.N. YuldashevaTashkent University of Information Technologies, Tashkent, Uzbekistan

2007en

Ochiq kirish: yoʻq

ABI

Annotatsiya

The quantity ratio simulating the characteristics of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier as a power function of input optical radiation is presented in the work.

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Mavzular

Semiconductor Lasers and Optical Devices Semiconductor Quantum Structures and Devices

Identifikatorlar

DOI: 10.1109/canet.2007.4401699

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