Особенности фотоэлектрических характеристик фотоэлектропреобразовательных структур

The peculiarities of photoelectric characteristics of converter structures based on the isotype n-GaAs/n-GaInAs heterojunction with Ag potential barriers have been investigated. The physical processes occurring in the potential barriers under optical irradiation are analyzed. The structures exhibit enhanced photosensitivity (2.2 A/W) at low light intensities. The photocurrent in the impurity absorption region covers a wide spectral range, extending up to 1.7 μm.

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