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Using laser sputtering to obtain semiconductor nanoheterostructures

Б. Н. ЗвонковScientific Research Physicotechnical Institute, N. I. Lobachevskiĭ Nizhniĭ Novgorod State University, Nizhniĭ NovgorodО. В. ВихроваScientific Research Physicotechnical Institute, N. I. Lobachevskiĭ Nizhniĭ Novgorod State University, Nizhniĭ NovgorodYu. A. DanilovPhysicotechnical InstituteП. Б. ДеминаScientific Research Physicotechnical Institute, N. I. Lobachevskiĭ Nizhniĭ Novgorod State University, Nizhniĭ NovgorodМ. В. ДорохинPhysicotechnical InstituteVladimir V. PodolskiiYaroslav-the-Wise Novgorod State UniversityЕ. С. ДемидовYaroslav-the-Wise Novgorod State UniversityYu. N. DrozdovInstitute of the Physics of Microstructures, Russian Academy of Sciences, Nizhniĭ NovgorodM. V. SapozhnikovInstitute of the Physics of Microstructures, Russian Academy of Sciences, Nizhniĭ Novgorod

Journal of Optical Technologyjournal2008en

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Annotatsiya

Laser sputtering of solid-state targets in a hydrogen atmosphere has been used to form semiconductor nanoheterostructures. Impurities (Te or Mn) in the form of delta-doped layers obtained by laser sputtering of the corresponding targets in the process of vapor-phase epitaxy using organometallic compounds can be introduced into light-emitting structures based on the InGaAs∕GaAs system to make it possible to control the spectrum and the electroluminescence intensity. Reducing the hydrogen pressure in the reactor to 25–50Torr allows laser deposition to be carried out at reduced temperatures of the epitaxial layers of the base material and makes it possible to obtain GaAs and InAs semiconductors with a high manganese-doping level that demonstrate ferromagnetic properties at room temperature.

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Mavzular

Semiconductor Quantum Structures and Devices nanoparticles nucleation surface interactions Ion-surface interactions and analysis

Identifikatorlar

DOI: 10.1364/jot.75.000389

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