Dilute magnetic semiconductor: Magnesium-doped Zn0.9Cd0.1GeAs2
В.М. НовоторцевKurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, RussiaI. S. ZakharovKursk State Technical University, Kursk, RussiaА. В. КочураKursk State Technical University, Kursk, RussiaR. LaihoWihuru Physical Laboratory, University of Turku, Turku, FinlandA. LashkulDepartment of Physics, Lappeenranta University of Technology, Lappeenranta, FinlandE. LähderantaDepartment of Physics, Lappeenranta University of Technology, Lappeenranta, FinlandС. Ф. МаренкинKurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, RussiaS. A. VarnavskiĭKurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, RussiaA. V. MolchanovRussian Academy of SciencesS. G. MikhailovKurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, RussiaM. S. ShakhovIoffe Physicotechnical Institute, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaG. S. Yur’evRussian Academy of Sciences
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Dilute magnetic semiconductors based on manganese-doped Zn0.9Cd0.1GeAs2 solid solution with various doping levels were synthesized. Their Curie point in 5-T magnetic field was 349 K. Ferromagnetic ordering in these semiconductors was due to MnAs nanoclusters, whose sizes were 3.7–3.8 nm.
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