Photovoltaic properties of microrelief GaAs structures
Р. А. МуминовPhysico-Technical Institute NPO Fizika-Solntse Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanМ. Н. ТурсуновPhysico-Technical Institute NPO Fizika-Solntse Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanU. B. AbdievPhysico-Technical Institute NPO Fizika-Solntse Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanZ. S. SettarovaPhysico-Technical Institute NPO Fizika-Solntse Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
Ochiq kirish: yoʻq
ABI
Annotatsiya
The formation of microrelief on the front surface of AlGaAs/GaAs cells is proposed. The technology of formation of diffusion p-n junctions has been developed and AlGaAs/GaAs-based photosensitive structures have been prepared. Their spectral characteristics are studied.
Hali tarjima qilinmagan
Mavzular
Identifikatorlar
Iqtiboslar va manbalar
0 ta iqtibos4 ta foydalanilgan manba