Некоторые особенности фотоэлектрических характеристик двухбазовой Ag–N⁰Al₀.₂Ga₀.₈As–n⁺GaAs–n⁰Ga₀.₉In₀.₁As–Au-структуры
D. M. YodgorovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. V. KarimovPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanF. A. GiyasovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanR. A. SaidovaPhysicotechnical Institute
2008uk
Ochiq kirishGibrid
Litsenziya: cc-by
ABI
Annotatsiya
The photoelectric characteristics of the fabricated double-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au structures, sensitive on both sides, have been investigated in photodiode and photovoltaic modes under irradiation determined by the intrinsic absorption region of each heterolayer. The obtained structures are of interest as noiseless photodetectors for opto- and microelectronics.
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