Арсенид-галлиевые p+–n–p+-структуры с обедняемой базовой областью

The work experimentally demonstrates that the mechanism of current transport through p+GaAs–nGaAs–p+GaAs structure is determined by injection–tunneling and generation–recombination mechanisms. When modulating the part of the base containing defects, the injection–tunneling current predominates, while in modulating the part of the base with fewer defects, the determining currents are generation–recombination. Such structures are of interest for the creation of voltage limiters and electronic switches.

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