Determination of the surface state density on the semiconductor-dielectric interface in the structures Al-SiO 2 -Si and Al-SiO 2 -n-Si at low temperature
G. GulyamovИ. Н. КаримовN. Yu. SharibaevУ. И. ЭркабоевNamangan pedagogical-engineering Institute, Namangan (Uzbekistan)
Ochiq kirish: yoʻq
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