Gamma-induced defects in BaFI crystals
И. НуритдиновAcademy of Sciences of UzbekistanB. T. AtashovBerdakh State University, ul Akademika Abdirova 1, Nukus, 742000, Karakalpakstan, UzbekistanA. B. UteniyazovaAjiniyaz Pedagogical Institute, ul. Dosnazarova 104, Nukus, 230100, Karakalpakstan, UzbekistanK. TurdanovAjiniyaz Pedagogical Institute, ul. Dosnazarova 104, Nukus, 230100, Karakalpakstan, Uzbekistan
Ochiq kirish: yoʻq
ABI
Annotatsiya
We have studied gamma-induced defects in BaFI crystals. To gain insight into the origin of the observed induced absorption bands, we analyzed the dose dependence of the concentration of color centers. The results lead us to assign the 205-nm absorption band to α(F−) centers, the 270-nm band to F i 0 centers, the 370-nm band to I i 0 centers, the bands around 480 nm to F(F−) centers, and the 610-nm band to F(I−) centers.
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