Dependence of Resistance Switching Voltage on the Potential Barrier in ZnO Thin Films
Vadim Sh. YalishevbQuantum‐Functional Semiconductor Research Center, Dongguk University, Seoul, KoreaSh. U. YuldashevbQuantum‐Functional Semiconductor Research Center, Dongguk University, Seoul, KoreaBae Ho ParkcDivision of Quantum Phases & Devices, School of Physics, Konkuk University, Seoul, KoreaJisoon IhmHyeonsik Cheong
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We have studied the electric properties of Au/ZnO/Al structures that exhibit a reproducible resistance switching under the applied voltage. Rupture and recovery of the conductive filaments at the ZnO/Au interface were suggested as responsible for this switching. Trapped charge electrons in the interface states can change width and height of a Shottky‐like barrier that exists on the Au/ZnO interface. However, the changing of the interface barrier characteristics leads to change of the resistance switching properties, decreasing or increasing their values.
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