Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode
Ш. А. МирсагатовFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Bodomzor-iuli 2b, Tashkent, 100084, UzbekistanI. B. SapaevAcademy of Sciences of UzbekistanZh. T. NazarovNavoi State Mining Institute, Yuzhnaya ul. 27a, Navoi, 210100, Uzbekistan
Ochiq kirish: yoʻq
ABI
Annotatsiya
We have studied the effect of ultrasonic processing on the electrical and photoelectric properties of a p-Si/n-CdS/n +-CdS injection photodiode. The results demonstrate that ultrasonic processing of such photodiodes reduces the density of surface states at the interface of their heterojunction as a result of defect annealing. This increases the spectral and integrated sensitivities of the photodiodes.
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