Thermoelectrical characteristics of granular semiconductors with resonance-tunnelling charge carriers for conversion of the solar radiation heat component
B. M. AbdurakhmanovInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, UzbekistanM. M. AdilovInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, UzbekistanМ. Х. АшуровInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, UzbekistanХ. Б. АшуровInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, UzbekistanШ.К. КучкановInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, UzbekistanС. Е. МаксимовInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, UzbekistanБ. Л. ОксенгендлерInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan
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Annotatsiya
We prove that the creation of a resonance tunnel level in the band gap of silicon dioxide which, in the form of specially created or natural nanoscale film, covers the granules of microgranular silicon, and thus allows a significant increase in the electric conductivity of this granular semiconductor. This, in combination with a high value of the Seebeck coefficient and the low thermal conductivity found in the experiments, can improve the efficiency of silicon-based converters of thermal energy and the solar radiation infrared component, as well as other known thermoelectric materials with special films on the granules.
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