Photoelectrical properties of n/6H–p +/3C–SiC and n/6H–SiC–p/Cdiamond heterostructures obtained via CVD
Timur SalievPhysicotechnical InstituteS. L. LutpullaevPhysics–Sun Physicotechnical Institute, Uzbekistan Academy of Sciences, Tashkent, UzbekistanА. КутлимратовPhysicotechnical InstituteN. T. MutalovPhysicotechnical Institute
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The work considers UV photodetectors (PDs) operating in the UV solar radiation spectral range, which exert a strong influence on the vital functions of living organisms of the Earth, including humans. Two different UV PDs developed on the basis of 6H–SiC: n/6H–SiC–p+/3C–SiC and n/6H–SiC–p/Cdiamond polytype heterostructures are considered. We show their band energy diagrams and photosensitivity spectra in the photogeneration and photodiode measuring modes.
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