CORRECTION TO TRANSPORT CROSS-SECTION OF CHARGED CARRIERS IN SEMICONDUCTORS

The analytical expressions for the corrections to transport cross-section for elastic scattering of charged carriers on the impurity ions are found. The corrections are connected with the influence of another impurity fields, distorting the ground (primly) ion’s field at long distance from it (small scattering angular). The renormalized method of corrections calculation to transport cross-section is developed, it’s considerably simplifying of intermediate calculations. The applicability of the formulas obtained is discussed. The main purpose of given investigation is to developing the new theoretical method for correct calculation of local corrections to transport cross-section of mobile carriers, scattering on ionized centers. The actuality of this theoretical investigation is connected with new achievements in the field of experimental physics and intensive development of effective theoretical methods calculation of kinetic parameters as well: charged carrier mobility, electronic conductivity. The results obtained can be applied in the physics of condensed matter, physics of plasma, state solid physics. Methods of research is based on the perturbative methods of classical and quantum mechanics, simple variational methods.Received 10.12.2015; accepted 27.01.2016

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