Study of the optical absorption and photoluminescence in (Pb,Gd)₃(Al,Ga)₅O₁₂ : Ce epitaxial films grown from Pb-containing melt solutions

The optical absorption and photoluminescence properties of cerium-activated (Pb,Gd) 3 (Al,Ga) 5 O 12 epitaxial films are studied. The films are grown on single-crystal (111)-oriented Gd 3 Ga 5 O 12 substrates by liquid-phase epitaxy from supercooled PbO – B 2 O 3 melt solutions at different concentrations of gadolinium, cerium, and aluminium oxides in the charge. The photoluminescence band of Ce 3+ ions is shown to peak at 532 nm. The highest cathodoluminescence yield of about 51500 photons MeV −1 at a decay time of the slow component of 61.0 ns (light yield fraction 68%) is found for the Pb 0.01 Ce 0.03 Gd 2.96 Al 3.14 Ga 1.86 O 12 film, grown from melt solution with gadolinium oxide, cerium oxide, and aluminium oxide concentrations of 0.4, 0.2, and 4.5 mol % in the charge, respectively. Epitaxial films with these spectroscopic characteristics are promising for application in scintillation screens.

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