The relative current change, concentration, and carrier mobility in silicon samples doped nickel and at pulse hydrostatic pressure
О. О. МаматкаримовNamangan Institute of Engineering and Technology, 716030 Namangan, UzbekistanР. Х. ХамидовA. A. AbdukarimovNamangan Institute of Engineering and Technology, 716030 Namangan, Uzbekistan
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