DEVELOPMENT OF SILICON DIFFUSION n-p-DETECTORS OF IONIZING RADIATION
S. A. RadzhapovPhysical-technical Institute, SPA «Physics-Sun», Academy of Sciencesof the Republic of UzbekistanRustam Khakimovich RakhimovInstitute of Materials Science «Physics-Sun», Uzbekistan Academy of SciencesБ. С. РаджаповPhysical-technical Institute, SPA «Physics-Sun», Academy of Sciencesof the Republic of UzbekistanM. A. ZufarovPhysical-technical Institute, SPA «Physics-Sun», Academy of Sciencesof the Republic of UzbekistanKutbiddin Ilovitddinovich VakhobovTashkent Technical University
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ABI
Annotatsiya
The paper presents an optimized manufacturing technology of silicon diffusion n-p detectors, as well as some research data on the spectrometric characteristics of silicon diffusion detectors of charged particles.
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