Mathematical modeling of the diffusion process of a semiconductor detector
RAMIZULLA MUMINOVInstitute of Materials Science, SPA “Physics-Sun”, Academy of Science of UzbekistanYorkin ToshmurodovKarshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization EngineersGiyosjon ErgashevInstitute of Materials Science, SPA “Physics-Sun”, Academy of Science of UzbekistanMAHMODJON YAVQOCHDIYEVKarshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers
Ochiq kirish: yoʻq
ABI
Annotatsiya
The article considers mathematical modeling of the technological process of drift of coordinate-sensitive detectors based on silicon with nuclear radiation, the sensor size of which is 50 × 50 × 1.5 mm and 8 bands, and compares them.
Hali tarjima qilinmagan
Mavzular
Identifikatorlar
Iqtiboslar va manbalar
0 ta iqtibos7 ta foydalanilgan manba