Study of the Influence of Ultrasonic Waves on Electro-physical Characteristics of Radiation Receivers
Abdumalik G. GaibovAssociate Professor, Head of the Department of General Physics, Tashkent State Technical UniversityKutbiddin Ilovitddinovich VakhobovSenior Lecturer, Department of “General Physics”, Tashkent State Technical UniversityМиркомилова Маргуба СунатуллаевнаAssociate Professor, Department of “General Physics”, Tashkent State Technical UniversityJuraev Utkir ErgashevichAn Assistant of the Department of “General Physics”, Tashkent State Technical UniversityB.V. IbragimovaSenior Lecturer, Department of “General Physics”, Tashkent State Technical University
2020en
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ABI
Annotatsiya
The physical processes of capture and ejection of charge carriers in Si-n-p radiation detectors, affecting their electro-physical characteristics (current-voltage), are investigated. It was shown that after ultrasonic treatment of Si detectors, the height of the potential barrier of p-n junctions formed by the presence of local clusters of impurity atoms decreased.
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