Asosiy kontentga oʻtish
Preprint

Low reflection at zero or low-energies in the well-barrier scattering potentials

Zafar AhmedBhabha Atomic Research CentreSachin KumarTheoretical Physics Section , Bhabha Atomic Research Centre , Mumbai 400085 , IndiaSharma, DhruvDepartment of Physics , The Max Planck Institute for Gravitational Physics ( Albert Einstein Institute) , Hannover
2020en
ABI

Annotatsiya

Probability of reflection $R(E)$ off a finite attractive scattering potential at zero or low energies is ordinarily supposed to be 1. However, a fully attractive potential presents a paradoxical result that $R(0)=0$ or $R(0)<1$, when an effective parameter $q$ of the potential admits special discrete values. Here, we report another class of finite potentials which are well-barrier (attractive-repulsive) type and which can be made to possess much less reflection at zero and low energies for a band of low values of $q$. These well-barrier potentials have only two real turning points for $E \in(V_{min}, V_{max})$, excepting $E=0$. We present two exactly solvable and two numerically solved models to confirm this phenomenon.

Hali tarjima qilinmagan

Identifikatorlar

Iqtiboslar va manbalar

0 ta iqtibos0 ta foydalanilgan manba