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Ish: Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

1. The Effect of Negative Magnetoresistance in Silicon to Create Multifunctional Sensors

   М. К. Бахадырханов, Х. М. Илиев, Г. Х. Мавлонов +2

   MaqolaMagnetic Field Sensors TechniquesTechnical Physics Letters20220 iqtibos

   ABIABI:AkademIndex/2022.article.006618

2. Anisotropy of Carrier Transport Processes in GaMnAs Grown via Low Temperature Molecular Beam Epitaxy

   A. S. Gazizulina, Aslan Nasirov, P.B. Parchinskiy

   MaqolaZnO doping and properties20220 iqtibos

   ABIABI:AkademIndex/2022.article.011234

3. Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

   P. B. Parchinskiy, A. S. Gazizulina, Aslan Nasirov

   MaqolaZnO doping and propertiesRussian Physics Journal20230 iqtibos

   ABIABI:AkademIndex/2023.article.004831