Тензостимулированный эффект в легированном и термообработанном кремнии при ориентированной деформации

The tensostimulated effect in heat-treated and doped silicon was investigated. It is shown that uniaxial compression in the [111] direction leads to the decay of thermal donors and the hysteresis development in the dependences of the resistivity on the compression value. It was found that the strain-stimulated effect in manganese-compensated silicon samples is due to simultaneous changes in the concentration and mobility of current carriers.

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