APV – Effect on Halcogenide Thin Curtains
Karimberdi OnarkulovFergana state university Professor of the department physicsNaymanboyev RakhmonaliFergana branch of Tashkent university of information technology Docent of the department physicsYuldashev Shohjahon AbrorovichFergana state university, doctoral studentЮлдашев Аброр АбдувоситовичFergana state university Teacher of the department physics
2021en
Ochiq kirishGibrid
Litsenziya: cc-by
ABI
Annotatsiya
The article presents the results of volt – ampere and temperature experiments conducted on chalcogenide thin films. Based on them, it was found that in the chalcogenide thin films there are non-homogeneous areas of a series of chains consisting of periodic repeating p-n-junctions. No interaction, charge exchange, or “transistor effect” is observed between adjacent p-n junctions in these fields. APV-effect occurs in specimens of chalcogenide thin films with very high resistance (R≥108 Ohm).
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