ELECTRONIC PROPERTIES OF A SEMICONDUCTOR TWO-BARRIER STRUCTURE
Voxob Rustamovich RasulovFergana state univerasityRustam Yavkachovich RasulovProfessor, Department of Physics, Fergana State University, UzbekistanMamatova Mahliyo AdhamovnaPhD student, Fergana state university, UzbekistanNurillo Ubaydullo ogli KodirovFergana state univerasity
Ochiq kirishOlmos
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The dependence of the transmission coefficient for an electron with energy E tunneling through a potential barrier of finite height and thickness in a two-barrier semiconductor structure is calculated, and it is shown that this dependence has an oscillatory character. On the basis of the continuity equation, the energy dependence of the frequency of electron collisions with the walls of the size-quantized potential is analyzed. KEY WORDS: transmission coefficient, two-barrier semiconductor structure, size quantization, energy spectrum, potential well.
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