THEORY OF THE CURRENT-VOLTAGE CHARACTERISTIC OF A THREE-LAYER SEMICONDUCTOR DIODE UNDER THE ACTION OF AN ELECTRIC FIELD
Voxob Rustamovich RasulovFergana State UniversityRustam Yavkachovich RasulovProfessor, Department of Physics, Fergana State University, UzbekistanMamatova Mahliyo AdhamovnaFergana State UniversityXudoyberdiyevaMuhayyoxon Zoirjon qiziPhD Research Scholar, Department of Physics, Fergana State University, Uzbekistan
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The current-voltage characteristic of a long three-layer semiconductor diode of the type: p+−n−n+, p+−n−p+, n+−n−n+, etc. has been calculated. Expressions are obtained for the current-voltage characteristic of a three-layer semiconductor structure, the base of which is made of a compensated semiconductor, taking into account the strength of the external electric field. It is shown that due to the presence of zero, minus and plus charged impurities in a compensated semiconductor, the dependence of the concentration of electrons and holes is non-linear. KEY WORDS: current-voltage characteristic, semiconductor structure, electrons and holes.
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