Влияние предварительной ионной бомбардировки на формирование нанопленок Co и CoSi-=SUB=-2-=/SUB=- на поверхности Si при твердофазном осаждении

In work to obtain ordered nanophases of Co and CoSi2, nuclei are preliminarily created on the Si surface by bombardment with Ar+ ions with E0 = 0.5 keV and D = 8 × 1013 cm-2. It was found that a narrow band gap (Еg = 0.3 eV) appears in the band structure at a Co layer thickness of less than 3 ML. The metallic properties of the Co film are manifested at a thickness of more than 4-5 ML. Heating the Co/Si(111) system at T = 900 K leads to the formation of nanophases and CoSi2 nanofilms. Еg of CoSi2 nanophases with Ɵ  3 ML is ~0.8 eV, and of CoSi2 films - 0.6 eV.

Hali tarjima qilinmagan