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Entropy of electron gas in semiconductor nanowires

G. GulyamovNamangan Engineering Construction Institute 1 , Namangan 160103, UzbekistanA. B. DavlatovPhysical-Technical Institute, Uzbekistan Academy of Sciences 3 , Tashkent 100084, UzbekistanDoston UrinboevNamangan Engineering Construction Institute 1 , Namangan 160103, Uzbekistan
Low Temperature Physicsjournal2023en

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The thermodynamic potential and entropy of the electron gas of a semiconductor nanowire are obtained. When calculating the entropy of an electron gas with a nonparabolic energy dispersion, the Nelson method was used. The entropy of the electron gas with the value of the chemical potential of the smaller line, which is equal to or greater than the energy of an arbitrary discrete energy level, is studied. An analytical expression for the entropy is obtained in the case when the chemical potential of the electron gas is equal to the energy of the discrete level. The temperature dependences of the entropy of the electron gas of semiconductor nanowires on the degree of nonparabolicity of the energy dispersion law are found.

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