Ushbu ish iqtibos qilgan ishlar

13 ta ish

Ish: Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters

1. Transport properties of silicon doped with manganese via low-temperature diffusion

   М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

   MaqolaSilicon and Solar Cell TechnologiesInorganic Materials201126 iqtibos

   ABIABI:AkademIndex/2026.other.229086

2. Infrared quenching of photoconduction in silicon with multicharge manganese clusters

   M. K. Bachadyrchanov, С. Б. Исамов, Н. Ф. Зикриллаев +1

   MaqolaSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20137 iqtibos

   ABIABI:AkademIndex/2013.article.000110

3. Spectra of the energy levels of multicharged nanoclusters of manganese atoms in silicon

   М. К. Бахадырханов, С. Б. Исамов

   MaqolaOAOchiq kirishLaser-Ablation Synthesis of NanoparticlesSurface Engineering and Applied Electrochemistry20113 iqtibos

   ABIABI:AkademIndex/2026.other.345486

4. The electrical properties of zinc in silicon

   Sharon M. Weiss, R. Beckmann, Rainer Kassing

   Maqola19903 iqtibos

   ABIABI:AkademIndex/2026.other.557535

5. Carrier transport mechanisms in semiconductor nanostructures and devices

   M. A. Rafiq

   Maqola20183 iqtibos

   ABIABI:AkademIndex/2026.other.557537

6. Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K

   Sana Boughdachi, Yosef Badalı, Yashar Azizian‐Kalandaragh +1

   Maqola20182 iqtibos

   ABIABI:AkademIndex/2026.other.557538

7. Current Understanding of the Fundamental Mechanisms of Doped and Loaded Semiconducting Metal-Oxide-Based Gas Sensing Materials

   David Degler, Udo Weimar, Nicolae Bârsan

   Sharh maqola20192 iqtibos

   ABIABI:AkademIndex/2026.other.557539

8. Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

   A. Türüt

   Maqola20202 iqtibos

   ABIABI:AkademIndex/2026.other.557540

9. Tunneling via surface dislocation in W/β-Ga₂O₃ Schottky barrier diodes

   Madani Labed, Ji Young Min, Amina Ben Slim +4

   Maqola20232 iqtibos

   ABIABI:AkademIndex/2026.other.557542

10. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.557533

11. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.557534

12. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.557536

13. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.557541