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Ish: Pressure as the device for changing electric parameters of Schottky diodes based on Si mono crystal

1. Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

   С. И. Власов

   MaqolaOAOchiq kirishAdvanced Materials and Semiconductor TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics20102 iqtibos

   ABIABI:AkademIndex/2010.article.000171

2. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.716263

3. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.716264