Influence Of Impurity Ni Atoms on The Electrophysical Parameters of Si
Н.А. ТургуновResearch Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, UzbekistanE.Kh. BerkinovResearch Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, UzbekistanRaymash M. TurmanovaResearch Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, UzbekistanN.B.XaytimmetovResearch Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, UzbekistanL.E.MadaliyevNamangan Engineering Pedagogical Institute
2023en
Ochiq kirishOlmos
ABI
Annotatsiya
Currently, silicon single crystals doped with impurity atoms of 3d transition metals forming bulk impurity nozzles in silicon are considered widely studied materials in terms of obtaining semiconductor materials with predetermined parameters, as well as control of electrophysical parameters
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