Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Distribution of impurities in base-depleted region of diode temperature sensor

1. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

   J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

   MaqolaSilicon and Solar Cell TechnologiesLow Temperature Physics20264 iqtibos

   ABIABI:AkademIndex/2026.article.003469

2. Temperature Response Curve of Silicon Diode Temperature Sensors

   Damir Istamov, O. A. Abdulkhaev, Shukurullo M. Kuliyev +3

   MaqolaOAOchiq kirishAdvanced MEMS and NEMS TechnologiesEast European Journal of Physics20251 iqtibos

   ABIABI:AkademIndex/2025.article.009033

3. Fabrication and Electrical Transport Properties of Triple-Barrier GaAs-BASED M–p–n–M Structures

   Bahodir M. Abdukahhorov, O. A. Abdulkhaev, Damir Istamov +2

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043966