Structural Features of Silicon with Tin Impurity
Sharifa B. UtamuradovaInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanBakhodir B. BokiyevInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanD. S. PulatovaInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
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In this work, samples of single-crystalline silicon doped with tin were studied using X-ray diffraction and electron microscopy. It has been established that at a scattering angle of 2θ » 36.6° in the X-ray diffraction patterns of n-Si and Si<Sn> samples, structural reflections (110) of the corresponding SiO2 nanocrystallites with lattice parameters a = b = 0,4936 нм и c = 0,5212 nm and c = 0.5212 nm, belonging to the hexagonal crystal lattice and space group P321. The formation of tin nanocrystallites with sizes of 9.1 and 8 nm in the near-surface regions of the Si<Sn> matrix crystal lattice was discovered.
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